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Автор Ju, Z G
Автор Lu, Y M
Автор Shan, C X
Автор Zhang, J Y
Автор Yao, B
Автор Shen, D Z
Дата выпуска 2008-01-07
dc.description Cadmium selenide (CdSe) thin films were fabricated on c-sapphire and GaAs (1 0 0) substrates by low pressure metal organic chemical vapour deposition. The structural properties of these CdSe thin films were investigated by x-ray diffraction and photoluminescence spectroscopy. The effects of growth temperature (T<sub>g</sub>) on the structural phase of the CdSe thin films were discussed. Phase transition of CdSe thin films grown on sapphire substrates from zincblende (ZB) to wurtzite (W) was observed with increasing T<sub>g</sub>, and the transition critical temperature is 440 °C. However, the CdSe films grown on GaAs (1 0 0) keep ZB form in the whole range of T<sub>g</sub> investigated from 300 to 500 °C.
Формат application.pdf
Издатель Institute of Physics Publishing
Копирайт 2008 IOP Publishing Ltd
Название Phase transition of cadmium selenide thin films in MOCVD growth process
Тип paper
DOI 10.1088/0022-3727/41/1/015304
Electronic ISSN 1361-6463
Print ISSN 0022-3727
Журнал Journal of Physics D: Applied Physics
Том 41
Первая страница 15304
Последняя страница 15307
Аффилиация Ju, Z G; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, People's Republic of China; Graduate School of the Chinese Academy of Sciences, Beijing 100039, People's Republic of China
Аффилиация Lu, Y M; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, People's Republic of China
Аффилиация Shan, C X; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, People's Republic of China
Аффилиация Zhang, J Y; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, People's Republic of China;
Аффилиация Yao, B; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, People's Republic of China
Аффилиация Shen, D Z; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, People's Republic of China
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