Автор |
Ju, Z G |
Автор |
Lu, Y M |
Автор |
Shan, C X |
Автор |
Zhang, J Y |
Автор |
Yao, B |
Автор |
Shen, D Z |
Дата выпуска |
2008-01-07 |
dc.description |
Cadmium selenide (CdSe) thin films were fabricated on c-sapphire and GaAs (1 0 0) substrates by low pressure metal organic chemical vapour deposition. The structural properties of these CdSe thin films were investigated by x-ray diffraction and photoluminescence spectroscopy. The effects of growth temperature (T<sub>g</sub>) on the structural phase of the CdSe thin films were discussed. Phase transition of CdSe thin films grown on sapphire substrates from zincblende (ZB) to wurtzite (W) was observed with increasing T<sub>g</sub>, and the transition critical temperature is 440 °C. However, the CdSe films grown on GaAs (1 0 0) keep ZB form in the whole range of T<sub>g</sub> investigated from 300 to 500 °C. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Копирайт |
2008 IOP Publishing Ltd |
Название |
Phase transition of cadmium selenide thin films in MOCVD growth process |
Тип |
paper |
DOI |
10.1088/0022-3727/41/1/015304 |
Electronic ISSN |
1361-6463 |
Print ISSN |
0022-3727 |
Журнал |
Journal of Physics D: Applied Physics |
Том |
41 |
Первая страница |
15304 |
Последняя страница |
15307 |
Аффилиация |
Ju, Z G; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, People's Republic of China; Graduate School of the Chinese Academy of Sciences, Beijing 100039, People's Republic of China |
Аффилиация |
Lu, Y M; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, People's Republic of China |
Аффилиация |
Shan, C X; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, People's Republic of China |
Аффилиация |
Zhang, J Y; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, People's Republic of China; |
Аффилиация |
Yao, B; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, People's Republic of China |
Аффилиация |
Shen, D Z; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, People's Republic of China |
Выпуск |
1 |