The growth of ZnMgO alloy films for deep ultraviolet detection
Liu, K W; Shen, D Z; Shan, C X; Zhang, J Y; Jiang, D Y; Zhao, Y M; Yao, B; Zhao, D X; Liu, K W; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China; Graduate School of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China; Shen, D Z; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China; Shan, C X; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China; Zhang, J Y; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China; Jiang, D Y; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China; Zhao, Y M; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China; Yao, B; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China; Zhao, D X; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China
Журнал:
Journal of Physics D: Applied Physics
Дата:
2008-06-21
Аннотация:
ZnMgO films are prepared by RF magnetron sputtering using a composite target and the Mg composition of the samples can be controlled easily even at a high growth temperature. The metal–semiconductor–metal photodetector based on the wurtzite Zn<sub>0.6</sub>Mg<sub>0.4</sub>O film exhibits a very low dark current (5 pA at |V<sub>bias</sub>| = 3 V) and a high UV/visible rejection ratio (more than three orders of magnitude). The peak responsivity of the photodetector is at around 270 nm and a very sharp cutoff wavelength is at a wavelength of about 295 nm corresponding to the absorption edge of the Zn<sub>0.6</sub>Mg<sub>0.4</sub>O film.
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