| Автор | Liu, K W |
| Автор | Shen, D Z |
| Автор | Shan, C X |
| Автор | Zhang, J Y |
| Автор | Jiang, D Y |
| Автор | Zhao, Y M |
| Автор | Yao, B |
| Автор | Zhao, D X |
| Дата выпуска | 2008-06-21 |
| dc.description | ZnMgO films are prepared by RF magnetron sputtering using a composite target and the Mg composition of the samples can be controlled easily even at a high growth temperature. The metal–semiconductor–metal photodetector based on the wurtzite Zn<sub>0.6</sub>Mg<sub>0.4</sub>O film exhibits a very low dark current (5 pA at |V<sub>bias</sub>| = 3 V) and a high UV/visible rejection ratio (more than three orders of magnitude). The peak responsivity of the photodetector is at around 270 nm and a very sharp cutoff wavelength is at a wavelength of about 295 nm corresponding to the absorption edge of the Zn<sub>0.6</sub>Mg<sub>0.4</sub>O film. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2008 IOP Publishing Ltd |
| Название | The growth of ZnMgO alloy films for deep ultraviolet detection |
| Тип | paper |
| DOI | 10.1088/0022-3727/41/12/125104 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 41 |
| Первая страница | 125104 |
| Последняя страница | 125106 |
| Аффилиация | Liu, K W; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China; Graduate School of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China |
| Аффилиация | Shen, D Z; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China |
| Аффилиация | Shan, C X; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China |
| Аффилиация | Zhang, J Y; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China |
| Аффилиация | Jiang, D Y; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China |
| Аффилиация | Zhao, Y M; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China |
| Аффилиация | Yao, B; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China |
| Аффилиация | Zhao, D X; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China |
| Выпуск | 12 |
