Автор |
Jiang, D Y |
Автор |
Shan, C X |
Автор |
Zhang, J Y |
Автор |
Lu, Y M |
Автор |
Yao, B |
Автор |
Zhao, D X |
Автор |
Zhang, Z Z |
Автор |
Shen, D Z |
Автор |
Yang, C L |
Дата выпуска |
2009-01-21 |
dc.description |
Cubic Mg<sub>x</sub>Zn<sub>1−x</sub>O thin films (x = 0.70) were grown on quartz substrates by radio frequency magnetron sputtering and a metal–semiconductor–metal structured photodetector was fabricated based on the film. The photodetector exhibited a dominant response peak at about 225 nm with a cutoff wavelength at about 230 nm, which lies in the solar-blind spectrum range (220–280 nm). A shoulder also appeared in the response spectrum at about 265 nm besides the dominant peak, which resulted from the phase separation in the Mg<sub>0.70</sub>Zn<sub>0.30</sub>O thin films as revealed by transmission electron microscopy. The photodetector showed very low dark current (2 pA at 3 V bias). |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Копирайт |
2009 IOP Publishing Ltd |
Название |
Mg<sub>x</sub>Zn<sub>1−x</sub>O solar-blind photodetector grown by radio frequency magnetron sputtering |
Тип |
paper |
DOI |
10.1088/0022-3727/42/2/025106 |
Electronic ISSN |
1361-6463 |
Print ISSN |
0022-3727 |
Журнал |
Journal of Physics D: Applied Physics |
Том |
42 |
Первая страница |
25106 |
Последняя страница |
25108 |
Аффилиация |
Jiang, D Y; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China; Graduate School of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China |
Аффилиация |
Shan, C X; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China |
Аффилиация |
Zhang, J Y; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China; |
Аффилиация |
Lu, Y M; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China |
Аффилиация |
Yao, B; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China |
Аффилиация |
Zhao, D X; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China |
Аффилиация |
Zhang, Z Z; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China |
Аффилиация |
Shen, D Z; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China |
Аффилиация |
Yang, C L; School of Physics and Engineering, Sun Yat Sen University, Guangzhou, People's Republic of China |
Выпуск |
2 |