High Temperature Operation of 5.5 μm Strain-Compensated Quantum Cascaded Lasers
Lu Xiu-Zhen; Liu Feng-Qi; Liu Jun-Qi; Jin Peng; Wang Zhan-Guo; Lu Xiu-Zhen; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083; Liu Feng-Qi; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083; Liu Jun-Qi; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083; Jin Peng; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083; Wang Zhan-Guo; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Журнал:
Chinese Physics Letters
Дата:
2005-12-01
Аннотация:
We develop 5.5-μm In<sub>x</sub>Ga<sub>1−x</sub>As/In<sub>y</sub>Al<sub>1−y</sub>As strain-compensated quantum cascade lasers with InP and InGaAs cladding layers by using solid-source molecular-beam epitaxy. Pulse operation has been achieved up to 323 K (50°C) for uncoated 20-μm-wide and 2-mm-long devices. These devices display an output power of 36 mW with a duty cycle of 1% at room temperature. In continuous wave operation a record peak optical power of 10 mW per facet has been measured at 83 K.
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