| Автор | Lu Xiu-Zhen |
| Автор | Liu Feng-Qi |
| Автор | Liu Jun-Qi |
| Автор | Jin Peng |
| Автор | Wang Zhan-Guo |
| Дата выпуска | 2005-12-01 |
| dc.description | We develop 5.5-μm In<sub>x</sub>Ga<sub>1−x</sub>As/In<sub>y</sub>Al<sub>1−y</sub>As strain-compensated quantum cascade lasers with InP and InGaAs cladding layers by using solid-source molecular-beam epitaxy. Pulse operation has been achieved up to 323 K (50°C) for uncoated 20-μm-wide and 2-mm-long devices. These devices display an output power of 36 mW with a duty cycle of 1% at room temperature. In continuous wave operation a record peak optical power of 10 mW per facet has been measured at 83 K. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | High Temperature Operation of 5.5 μm Strain-Compensated Quantum Cascaded Lasers |
| Тип | paper |
| DOI | 10.1088/0256-307X/22/12/026 |
| Electronic ISSN | 1741-3540 |
| Print ISSN | 0256-307X |
| Журнал | Chinese Physics Letters |
| Том | 22 |
| Первая страница | 3077 |
| Последняя страница | 3079 |
| Аффилиация | Lu Xiu-Zhen; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
| Аффилиация | Liu Feng-Qi; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
| Аффилиация | Liu Jun-Qi; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
| Аффилиация | Jin Peng; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
| Аффилиация | Wang Zhan-Guo; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
| Выпуск | 12 |
