A 10-GHz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth
Zhao Qian; Pan Jiao-Qing; Zhou Fan; Wang Bao-Jun; Wang Lu-Feng; Wang Wei; Zhao Qian; National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Pan Jiao-Qing; National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Zhou Fan; National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Wang Bao-Jun; National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Wang Lu-Feng; National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Wang Wei; National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Журнал:
Chinese Physics Letters
Дата:
2005-08-01
Аннотация:
A novel integration technique has been developed using band-gap energy control of InGaAsP/InGaAsP multi-quantum-well (MQW) structures during simultaneous ultra-low-pressure (22 mbar) selective-area-growth (SAG) process in metal-organic chemical vapour deposition. A fundamental study of the controllability of band gap energy by the SAG method is performed. A large band-gap photoluminescence wavelength shift of 83 nm is obtained with a small mask width variation (0–30 μm). The method is then applied to fabricate an MQW distributed-feedback laser monolithically integrated with an electroabsorption modulator. The experimental results exhibit superior device characteristics with low threshold of 19 mA, over 24 dB extinction ratio when coupled into a single mode fibre. More than 10 GHz modulation bandwidth is also achieved, which demonstrates that the ultra-low-pressure SAG technique is a promising approach for high-speed transmission photonic integrated circuits.
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