| Автор | Zhao Qian |
| Автор | Pan Jiao-Qing |
| Автор | Zhou Fan |
| Автор | Wang Bao-Jun |
| Автор | Wang Lu-Feng |
| Автор | Wang Wei |
| Дата выпуска | 2005-08-01 |
| dc.description | A novel integration technique has been developed using band-gap energy control of InGaAsP/InGaAsP multi-quantum-well (MQW) structures during simultaneous ultra-low-pressure (22 mbar) selective-area-growth (SAG) process in metal-organic chemical vapour deposition. A fundamental study of the controllability of band gap energy by the SAG method is performed. A large band-gap photoluminescence wavelength shift of 83 nm is obtained with a small mask width variation (0–30 μm). The method is then applied to fabricate an MQW distributed-feedback laser monolithically integrated with an electroabsorption modulator. The experimental results exhibit superior device characteristics with low threshold of 19 mA, over 24 dB extinction ratio when coupled into a single mode fibre. More than 10 GHz modulation bandwidth is also achieved, which demonstrates that the ultra-low-pressure SAG technique is a promising approach for high-speed transmission photonic integrated circuits. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | A 10-GHz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth |
| Тип | paper |
| DOI | 10.1088/0256-307X/22/8/054 |
| Electronic ISSN | 1741-3540 |
| Print ISSN | 0256-307X |
| Журнал | Chinese Physics Letters |
| Том | 22 |
| Первая страница | 2016 |
| Последняя страница | 2019 |
| Аффилиация | Zhao Qian; National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
| Аффилиация | Pan Jiao-Qing; National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
| Аффилиация | Zhou Fan; National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
| Аффилиация | Wang Bao-Jun; National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
| Аффилиация | Wang Lu-Feng; National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
| Аффилиация | Wang Wei; National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
| Выпуск | 8 |
