Electroluminescence of an n-ZnO/p-GaN Heterojunction under Forward and Reverse Biases
Qin Qi; Guo Li-Wei; Zhou Zhong-Tang; Chen Hong; Du Xiao-Long; Mei Zeng-Xia; Jia Jin-Feng; Xue Qi-Kun; Zhou Jun-Ming; Qin Qi; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Guo Li-Wei; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Zhou Zhong-Tang; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Chen Hong; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Du Xiao-Long; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Mei Zeng-Xia; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Jia Jin-Feng; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Xue Qi-Kun; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Zhou Jun-Ming; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Журнал:
Chinese Physics Letters
Дата:
2005-09-01
Аннотация:
Electroluminescent characteristics of n-ZnO/p-GaN heterojunctions under forward and reverse biases are studied. Emissions at 389 nm and 570 nm are observed under forward bias. An unusual emission at 390 nm appears under reverse bias, and is attributed to the recombination in the p-GaN side of the heterojunction. The yellow emission peaked at 570 nm is suppressed under reverse bias. The light intensity exponentially depends on the reverse current. The emission under reverse bias is correlated to tunnelling carrier transport in the heterostructure. Our results also support that the well-known yellow band of GaN comes from the transitions between some near-conduction-band-edge states and deep localized acceptor states.
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