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Автор Qin Qi
Автор Guo Li-Wei
Автор Zhou Zhong-Tang
Автор Chen Hong
Автор Du Xiao-Long
Автор Mei Zeng-Xia
Автор Jia Jin-Feng
Автор Xue Qi-Kun
Автор Zhou Jun-Ming
Дата выпуска 2005-09-01
dc.description Electroluminescent characteristics of n-ZnO/p-GaN heterojunctions under forward and reverse biases are studied. Emissions at 389 nm and 570 nm are observed under forward bias. An unusual emission at 390 nm appears under reverse bias, and is attributed to the recombination in the p-GaN side of the heterojunction. The yellow emission peaked at 570 nm is suppressed under reverse bias. The light intensity exponentially depends on the reverse current. The emission under reverse bias is correlated to tunnelling carrier transport in the heterostructure. Our results also support that the well-known yellow band of GaN comes from the transitions between some near-conduction-band-edge states and deep localized acceptor states.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Electroluminescence of an n-ZnO/p-GaN Heterojunction under Forward and Reverse Biases
Тип paper
DOI 10.1088/0256-307X/22/9/044
Electronic ISSN 1741-3540
Print ISSN 0256-307X
Журнал Chinese Physics Letters
Том 22
Первая страница 2298
Последняя страница 2301
Аффилиация Qin Qi; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Аффилиация Guo Li-Wei; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Аффилиация Zhou Zhong-Tang; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Аффилиация Chen Hong; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Аффилиация Du Xiao-Long; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Аффилиация Mei Zeng-Xia; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Аффилиация Jia Jin-Feng; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Аффилиация Xue Qi-Kun; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Аффилиация Zhou Jun-Ming; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
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