Characteristics of High In-Content InGaN Alloys Grown by MOCVD
Zhu Xue-Liang; Guo Li-Wei; Yu Nai-Sen; Peng Ming-Zeng; Yan Jian-Feng; Ge Bing-Hui; Jia Hai-Qiang; Chen Hong; Zhou Jun-Ming; Zhu Xue-Liang; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Guo Li-Wei; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Yu Nai-Sen; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Peng Ming-Zeng; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Yan Jian-Feng; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Ge Bing-Hui; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Jia Hai-Qiang; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Chen Hong; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Zhou Jun-Ming; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Журнал:
Chinese Physics Letters
Дата:
2006-12-01
Аннотация:
InN and In<sub>0.46</sub>Ga<sub>0.54</sub>N films are grown on sapphire with a GaN buffer by metalorganic chemical vapour deposition (MOCVD). Both high resolution x-ray diffraction and high resolution transmission electron microscopy results reveal that these films have a hexagonal structure of single crystal. The thin InN film has a high mobility of 475 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup> and that of In<sub>0.46</sub>Ga<sub>0.54</sub>N is 163 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>. Room-temperature photoluminescence measurement of the InN film shows a peak at 0.72 eV, confirming that a high quality InN film is fabricated for applications to full spectrum solar cells.
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