Автор |
Zhu Xue-Liang |
Автор |
Guo Li-Wei |
Автор |
Yu Nai-Sen |
Автор |
Peng Ming-Zeng |
Автор |
Yan Jian-Feng |
Автор |
Ge Bing-Hui |
Автор |
Jia Hai-Qiang |
Автор |
Chen Hong |
Автор |
Zhou Jun-Ming |
Дата выпуска |
2006-12-01 |
dc.description |
InN and In<sub>0.46</sub>Ga<sub>0.54</sub>N films are grown on sapphire with a GaN buffer by metalorganic chemical vapour deposition (MOCVD). Both high resolution x-ray diffraction and high resolution transmission electron microscopy results reveal that these films have a hexagonal structure of single crystal. The thin InN film has a high mobility of 475 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup> and that of In<sub>0.46</sub>Ga<sub>0.54</sub>N is 163 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>. Room-temperature photoluminescence measurement of the InN film shows a peak at 0.72 eV, confirming that a high quality InN film is fabricated for applications to full spectrum solar cells. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
Characteristics of High In-Content InGaN Alloys Grown by MOCVD |
Тип |
paper |
DOI |
10.1088/0256-307X/23/12/069 |
Electronic ISSN |
1741-3540 |
Print ISSN |
0256-307X |
Журнал |
Chinese Physics Letters |
Том |
23 |
Первая страница |
3369 |
Последняя страница |
3372 |
Аффилиация |
Zhu Xue-Liang; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
Аффилиация |
Guo Li-Wei; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
Аффилиация |
Yu Nai-Sen; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
Аффилиация |
Peng Ming-Zeng; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
Аффилиация |
Yan Jian-Feng; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
Аффилиация |
Ge Bing-Hui; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
Аффилиация |
Jia Hai-Qiang; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
Аффилиация |
Chen Hong; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
Аффилиация |
Zhou Jun-Ming; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
Выпуск |
12 |