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Автор Zhu Xue-Liang
Автор Guo Li-Wei
Автор Yu Nai-Sen
Автор Peng Ming-Zeng
Автор Yan Jian-Feng
Автор Ge Bing-Hui
Автор Jia Hai-Qiang
Автор Chen Hong
Автор Zhou Jun-Ming
Дата выпуска 2006-12-01
dc.description InN and In<sub>0.46</sub>Ga<sub>0.54</sub>N films are grown on sapphire with a GaN buffer by metalorganic chemical vapour deposition (MOCVD). Both high resolution x-ray diffraction and high resolution transmission electron microscopy results reveal that these films have a hexagonal structure of single crystal. The thin InN film has a high mobility of 475 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup> and that of In<sub>0.46</sub>Ga<sub>0.54</sub>N is 163 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>. Room-temperature photoluminescence measurement of the InN film shows a peak at 0.72 eV, confirming that a high quality InN film is fabricated for applications to full spectrum solar cells.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Characteristics of High In-Content InGaN Alloys Grown by MOCVD
Тип paper
DOI 10.1088/0256-307X/23/12/069
Electronic ISSN 1741-3540
Print ISSN 0256-307X
Журнал Chinese Physics Letters
Том 23
Первая страница 3369
Последняя страница 3372
Аффилиация Zhu Xue-Liang; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Аффилиация Guo Li-Wei; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Аффилиация Yu Nai-Sen; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Аффилиация Peng Ming-Zeng; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Аффилиация Yan Jian-Feng; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Аффилиация Ge Bing-Hui; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Аффилиация Jia Hai-Qiang; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Аффилиация Chen Hong; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Аффилиация Zhou Jun-Ming; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
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