High-Power Electroabsorption Modulator Using Intrastep Quantum Well
Cheng Yuan-Bing; Pan Jiao-Qing; Zhou Fan; Zhu Hong-Liang; Zhao Ling-Juan; Wang Wei; Cheng Yuan-Bing; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing; Pan Jiao-Qing; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing; Zhou Fan; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing; Zhu Hong-Liang; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing; Zhao Ling-Juan; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing; Wang Wei; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing
Журнал:
Chinese Physics Letters
Дата:
2007-07-01
Аннотация:
An electroabsorption modulator using the intrastep quantum well (IQW) active region is fabricated for optical network systems. The strain-compensated InGaAsP/InGaAsP IQW shows good material quality and improved modulation properties, high extinction ratio efficiency 10 dB/V and low capacitance (<0.42 pF), with which an ultra high frequency (>15 GHz) can be obtained. High-speed measurement under high-power excitation shows no power saturation up to excitation power of 21 dBm. To our knowledge, the input optical power is the highest reported for multi-quantum well EAMs without heat sinks.
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