Мобильная версия

Доступно журналов:

3 288

Доступно статей:

3 891 637

 

Скрыть метаданые

Автор Cheng Yuan-Bing
Автор Pan Jiao-Qing
Автор Zhou Fan
Автор Zhu Hong-Liang
Автор Zhao Ling-Juan
Автор Wang Wei
Дата выпуска 2007-07-01
dc.description An electroabsorption modulator using the intrastep quantum well (IQW) active region is fabricated for optical network systems. The strain-compensated InGaAsP/InGaAsP IQW shows good material quality and improved modulation properties, high extinction ratio efficiency 10 dB/V and low capacitance (<0.42 pF), with which an ultra high frequency (>15 GHz) can be obtained. High-speed measurement under high-power excitation shows no power saturation up to excitation power of 21 dBm. To our knowledge, the input optical power is the highest reported for multi-quantum well EAMs without heat sinks.
Формат application.pdf
Издатель Institute of Physics Publishing
Название High-Power Electroabsorption Modulator Using Intrastep Quantum Well
Тип paper
DOI 10.1088/0256-307X/24/7/095
Electronic ISSN 1741-3540
Print ISSN 0256-307X
Журнал Chinese Physics Letters
Том 24
Первая страница 2128
Последняя страница 2130
Аффилиация Cheng Yuan-Bing; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing
Аффилиация Pan Jiao-Qing; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing
Аффилиация Zhou Fan; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing
Аффилиация Zhu Hong-Liang; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing
Аффилиация Zhao Ling-Juan; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing
Аффилиация Wang Wei; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing
Выпуск 7

Скрыть метаданые