Автор |
Cheng Yuan-Bing |
Автор |
Pan Jiao-Qing |
Автор |
Zhou Fan |
Автор |
Zhu Hong-Liang |
Автор |
Zhao Ling-Juan |
Автор |
Wang Wei |
Дата выпуска |
2007-07-01 |
dc.description |
An electroabsorption modulator using the intrastep quantum well (IQW) active region is fabricated for optical network systems. The strain-compensated InGaAsP/InGaAsP IQW shows good material quality and improved modulation properties, high extinction ratio efficiency 10 dB/V and low capacitance (<0.42 pF), with which an ultra high frequency (>15 GHz) can be obtained. High-speed measurement under high-power excitation shows no power saturation up to excitation power of 21 dBm. To our knowledge, the input optical power is the highest reported for multi-quantum well EAMs without heat sinks. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
High-Power Electroabsorption Modulator Using Intrastep Quantum Well |
Тип |
paper |
DOI |
10.1088/0256-307X/24/7/095 |
Electronic ISSN |
1741-3540 |
Print ISSN |
0256-307X |
Журнал |
Chinese Physics Letters |
Том |
24 |
Первая страница |
2128 |
Последняя страница |
2130 |
Аффилиация |
Cheng Yuan-Bing; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing |
Аффилиация |
Pan Jiao-Qing; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing |
Аффилиация |
Zhou Fan; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing |
Аффилиация |
Zhu Hong-Liang; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing |
Аффилиация |
Zhao Ling-Juan; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing |
Аффилиация |
Wang Wei; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing |
Выпуск |
7 |