Sb-doped ZnO thin films are deposited on c-plane sapphire substrates by pulsed laser deposition. Hall results indicate that the conductivity of the Sb-doped ZnO thin films is strongly dependent on the substrate temperature. The sample deposited at the temperature of 550°C exhibits p-type conductivity. It gives a resistivity of 15.25 Ω · cm, with a Hall mobility of 1.79cm²V⁻¹s⁻¹ and a carrier concentration of 2.290 × 10¹⁷ cm⁻³ at room temperature. The x-ray diffraction indicates that the Sb-doped ZnO thin films deposited in the range of 450–650°C are high c-axis oriented. Low-temperature photoluminescence spectra indicate that the sample deposited at 550°C shows the strong acceptor-bound exciton (A⁰X) emission.