Автор |
Zhao Zi-Wen |
Автор |
Hu Li-Zhong |
Автор |
Zhang He-Qiu |
Автор |
Sun Jing-Chang |
Автор |
Bian Ji-Ming |
Автор |
Sun Kai-Tong |
Автор |
Chen Xi |
Автор |
Zhao Jian-Ze |
Автор |
Li Xue |
Автор |
Zhu Jin-Xia |
Дата выпуска |
2010-01-01 |
dc.description |
Sb-doped ZnO thin films are deposited on c-plane sapphire substrates by pulsed laser deposition. Hall results indicate that the conductivity of the Sb-doped ZnO thin films is strongly dependent on the substrate temperature. The sample deposited at the temperature of 550°C exhibits p-type conductivity. It gives a resistivity of 15.25 Ω · cm, with a Hall mobility of 1.79cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup> and a carrier concentration of 2.290 × 10<sup>17</sup> cm<sup>−3</sup> at room temperature. The x-ray diffraction indicates that the Sb-doped ZnO thin films deposited in the range of 450–650°C are high c-axis oriented. Low-temperature photoluminescence spectra indicate that the sample deposited at 550°C shows the strong acceptor-bound exciton (A<sup>0</sup>X) emission. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Копирайт |
2010 Chinese Physical Society and IOP Publishing Ltd |
Название |
Effect of Different Substrate Temperature on Sb-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition on Sapphire Substrates |
Тип |
paper |
DOI |
10.1088/0256-307X/27/1/017301 |
Electronic ISSN |
1741-3540 |
Print ISSN |
0256-307X |
Журнал |
Chinese Physics Letters |
Том |
27 |
Первая страница |
17301 |
Последняя страница |
17303 |
Выпуск |
1 |