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Автор Zhao Zi-Wen
Автор Hu Li-Zhong
Автор Zhang He-Qiu
Автор Sun Jing-Chang
Автор Bian Ji-Ming
Автор Sun Kai-Tong
Автор Chen Xi
Автор Zhao Jian-Ze
Автор Li Xue
Автор Zhu Jin-Xia
Дата выпуска 2010-01-01
dc.description Sb-doped ZnO thin films are deposited on c-plane sapphire substrates by pulsed laser deposition. Hall results indicate that the conductivity of the Sb-doped ZnO thin films is strongly dependent on the substrate temperature. The sample deposited at the temperature of 550°C exhibits p-type conductivity. It gives a resistivity of 15.25 Ω · cm, with a Hall mobility of 1.79cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup> and a carrier concentration of 2.290 × 10<sup>17</sup> cm<sup>−3</sup> at room temperature. The x-ray diffraction indicates that the Sb-doped ZnO thin films deposited in the range of 450–650°C are high c-axis oriented. Low-temperature photoluminescence spectra indicate that the sample deposited at 550°C shows the strong acceptor-bound exciton (A<sup>0</sup>X) emission.
Формат application.pdf
Издатель Institute of Physics Publishing
Копирайт 2010 Chinese Physical Society and IOP Publishing Ltd
Название Effect of Different Substrate Temperature on Sb-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition on Sapphire Substrates
Тип paper
DOI 10.1088/0256-307X/27/1/017301
Electronic ISSN 1741-3540
Print ISSN 0256-307X
Журнал Chinese Physics Letters
Том 27
Первая страница 17301
Последняя страница 17303
Выпуск 1

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