The effect of dead space on gain and excess noise in In<sub>0.48</sub>Ga<sub>0.52</sub>P p<sup>+</sup>in<sup>+</sup> diodes
C H Tan; R Ghin; J P R David; G J Rees; M Hopkinson; C H Tan; Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK; R Ghin; Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK; J P R David; Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK; G J Rees; Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK; M Hopkinson; Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK
Журнал:
Semiconductor Science and Technology
Дата:
2003-08-01
Аннотация:
Electron-initiated avalanche gain and excess noise were measured in In<sub>0.48</sub>Ga<sub>0.52</sub>P p<sup>+</sup>in<sup>+</sup> diodes, with avalanche region widths varying from 1 µm down to 0.1 µm, and also in a p<sup>+</sup>n<sup>+</sup> diode. Hole-initiated gain is also measured in some diodes. We find that hole-initiated gain is only marginally higher than electron-initiated gain, indicating that the hole ionization coefficient is only slightly higher than the electron ionization coefficient. Electron-initiated excess noise is seen to fall as avalanche width is reduced. A simple Monte Carlo model (SMC) was used to interpret the results and to extract the ionization coefficients and effective threshold energies. A comparison between In<sub>0.48</sub>Ga<sub>0.52</sub>P and GaAs using the SMC suggests that, for a given avalanche width, the dead space effect is less significant in In<sub>0.48</sub>Ga<sub>0.52</sub>P at any value of gain. It was also found that the ionization path length probability distribution function is broader in In<sub>0.48</sub>Ga<sub>0.52</sub>P, leading to higher excess noise.
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