| Автор | C H Tan |
| Автор | R Ghin |
| Автор | J P R David |
| Автор | G J Rees |
| Автор | M Hopkinson |
| Дата выпуска | 2003-08-01 |
| dc.description | Electron-initiated avalanche gain and excess noise were measured in In<sub>0.48</sub>Ga<sub>0.52</sub>P p<sup>+</sup>in<sup>+</sup> diodes, with avalanche region widths varying from 1 µm down to 0.1 µm, and also in a p<sup>+</sup>n<sup>+</sup> diode. Hole-initiated gain is also measured in some diodes. We find that hole-initiated gain is only marginally higher than electron-initiated gain, indicating that the hole ionization coefficient is only slightly higher than the electron ionization coefficient. Electron-initiated excess noise is seen to fall as avalanche width is reduced. A simple Monte Carlo model (SMC) was used to interpret the results and to extract the ionization coefficients and effective threshold energies. A comparison between In<sub>0.48</sub>Ga<sub>0.52</sub>P and GaAs using the SMC suggests that, for a given avalanche width, the dead space effect is less significant in In<sub>0.48</sub>Ga<sub>0.52</sub>P at any value of gain. It was also found that the ionization path length probability distribution function is broader in In<sub>0.48</sub>Ga<sub>0.52</sub>P, leading to higher excess noise. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The effect of dead space on gain and excess noise in In<sub>0.48</sub>Ga<sub>0.52</sub>P p<sup>+</sup>in<sup>+</sup> diodes |
| Тип | paper |
| DOI | 10.1088/0268-1242/18/8/314 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 18 |
| Первая страница | 803 |
| Последняя страница | 806 |
| Аффилиация | C H Tan; Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK |
| Аффилиация | R Ghin; Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK |
| Аффилиация | J P R David; Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK |
| Аффилиация | G J Rees; Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK |
| Аффилиация | M Hopkinson; Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK |
| Выпуск | 8 |
