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Автор R Rengel
Автор D Pardo
Автор M J Martín-Martínez
Дата выпуска 2004-04-01
dc.description In this work, the RF and microwave noise performance of bulk and fully-depleted silicon-on-insulator (FD SOI) transistors with directly comparable topologies is investigated by means of an ensemble Monte Carlo simulator, and in the case of FD SOI devices, the influence of varying the active layer thickness is also studied. Intrinsic noise sources are calculated and analysed, and important figures of merit such as NF<sub>min</sub> or R<sub>n</sub> are also determined and evaluated. Moreover, a microscopic understanding of the noise phenomena is achieved, which is essential for the optimization of the transistors. FD SOI devices show a reduced influence of induced gate noise and drain noise as compared to the bulk transistor due to the minor influence of phonon scattering and energetic carriers at the pinch-off region. Whereas reducing the active layer thickness minimizes the effect of hot carriers in the noise parameters, it can lead to a degradation of other important high-frequency figures of merit such as g<sub>m</sub> or f<sub>T</sub>.
Формат application.pdf
Издатель Institute of Physics Publishing
Копирайт 2004 IOP Publishing Ltd
Название 2D ensemble Monte Carlo modelling of bulk and FD SOI MOSFETs: active layer thickness and noise performance
Тип paper
DOI 10.1088/0268-1242/19/4/068
Electronic ISSN 1361-6641
Print ISSN 0268-1242
Журнал Semiconductor Science and Technology
Том 19
Первая страница S199
Последняя страница S201
Аффилиация R Rengel; Departamento de Física Aplicada, Universidad de Salamanca. Pza de la Merced s/n, 37008 Salamanca, Spain
Аффилиация D Pardo; Departamento de Física Aplicada, Universidad de Salamanca. Pza de la Merced s/n, 37008 Salamanca, Spain
Аффилиация M J Martín-Martínez; Departamento de Física Aplicada, Universidad de Salamanca. Pza de la Merced s/n, 37008 Salamanca, Spain
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