10 Gbit s<sup>−1</sup> electroabsorption modulator integrated with a DBR laser using the selective area growth technique
Sim, Jae-Sik; Kim, Sung-Bock; Ryu, Sang-Wan; Baek, Yong-Soon; Sim, Jae-Sik; Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon 305-350, Korea; Kim, Sung-Bock; Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon 305-350, Korea; Ryu, Sang-Wan; Department of Physics, Chonnam National University, 300 Yongbong-Dong, Buk-Gu, Gwangju 500-757, Korea; Baek, Yong-Soon; Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon 305-350, Korea
Журнал:
Semiconductor Science and Technology
Дата:
2005-10-01
Аннотация:
We report 10 Gbit s<sup>−1</sup> operation of an electroabsorption modulator (EAM) integrated with a distributed Bragg reflector (DBR) laser. The selective area growth technique was first employed in the 10 Gbit s<sup>−1</sup> EAM fabrications to grow an active layer in the regions of the laser and the modulator. High side mode suppression ratios (SMSRs) over 45 dB and a 3 dB bandwidth of 12 GHz were observed. A clearly opened eye-diagram was also observed with 10 Gbit s<sup>−1</sup> non-return to zero (NRZ) modulation signals.
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