| Автор | Sim, Jae-Sik |
| Автор | Kim, Sung-Bock |
| Автор | Ryu, Sang-Wan |
| Автор | Baek, Yong-Soon |
| Дата выпуска | 2005-10-01 |
| dc.description | We report 10 Gbit s<sup>−1</sup> operation of an electroabsorption modulator (EAM) integrated with a distributed Bragg reflector (DBR) laser. The selective area growth technique was first employed in the 10 Gbit s<sup>−1</sup> EAM fabrications to grow an active layer in the regions of the laser and the modulator. High side mode suppression ratios (SMSRs) over 45 dB and a 3 dB bandwidth of 12 GHz were observed. A clearly opened eye-diagram was also observed with 10 Gbit s<sup>−1</sup> non-return to zero (NRZ) modulation signals. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2005 IOP Publishing Ltd |
| Название | 10 Gbit s<sup>−1</sup> electroabsorption modulator integrated with a DBR laser using the selective area growth technique |
| Тип | lett |
| DOI | 10.1088/0268-1242/20/10/L01 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 20 |
| Первая страница | L47 |
| Последняя страница | L49 |
| Аффилиация | Sim, Jae-Sik; Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon 305-350, Korea |
| Аффилиация | Kim, Sung-Bock; Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon 305-350, Korea |
| Аффилиация | Ryu, Sang-Wan; Department of Physics, Chonnam National University, 300 Yongbong-Dong, Buk-Gu, Gwangju 500-757, Korea |
| Аффилиация | Baek, Yong-Soon; Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon 305-350, Korea |
| Выпуск | 10 |
