10 Gbit s<sup>−1</sup> electroabsorption-modulated laser light-source module using selective area MOVPE
Li, Baoxia; Zhu, Hongliang; Zhang, Jing; Zhao, Qian; Pian, Jiaoqing; Ding, Ying; Wang, Baojun; Bian, Jing; Zhao, Lingjuan; Wang, Wei; Li, Baoxia; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Zhu, Hongliang; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Zhang, Jing; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Zhao, Qian; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Pian, Jiaoqing; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Ding, Ying; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Wang, Baojun; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Bian, Jing; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Zhao, Lingjuan; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Wang, Wei; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China
Журнал:
Semiconductor Science and Technology
Дата:
2005-09-01
Аннотация:
A distributed-feedback (DFB) laser and a high-speed electroabsorption (EA) modulator are integrated, on the basis of the selective area MOVPE growth (SAG) technique and the ridge waveguide structure, for a 10 Gbit s<sup>−1</sup> optical transmission system. The integrated DFB laser/EA modulator device is packaged in a compact module with a 20% optical coupling efficiency to the single-mode fibre. The typical threshold current is 15 mA, and the side-mode suppression ratio is over 40 dB with the single-mode operation at 1550 nm. The module exhibits 1.2 mW fibre output power at a laser gain current of 70 mA and a modulator bias voltage of 0 V. The 3 dB bandwidth is 12 GHz. A dynamic extinction ratio of over 10 dB has been successfully achieved under 10 Gbit s<sup>−1</sup> non-return to zero (NRZ) operation, and a clearly open eye diagram is obtained.
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