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Автор Li, Baoxia
Автор Zhu, Hongliang
Автор Zhang, Jing
Автор Zhao, Qian
Автор Pian, Jiaoqing
Автор Ding, Ying
Автор Wang, Baojun
Автор Bian, Jing
Автор Zhao, Lingjuan
Автор Wang, Wei
Дата выпуска 2005-09-01
dc.description A distributed-feedback (DFB) laser and a high-speed electroabsorption (EA) modulator are integrated, on the basis of the selective area MOVPE growth (SAG) technique and the ridge waveguide structure, for a 10 Gbit s<sup>−1</sup> optical transmission system. The integrated DFB laser/EA modulator device is packaged in a compact module with a 20% optical coupling efficiency to the single-mode fibre. The typical threshold current is 15 mA, and the side-mode suppression ratio is over 40 dB with the single-mode operation at 1550 nm. The module exhibits 1.2 mW fibre output power at a laser gain current of 70 mA and a modulator bias voltage of 0 V. The 3 dB bandwidth is 12 GHz. A dynamic extinction ratio of over 10 dB has been successfully achieved under 10 Gbit s<sup>−1</sup> non-return to zero (NRZ) operation, and a clearly open eye diagram is obtained.
Формат application.pdf
Издатель Institute of Physics Publishing
Копирайт 2005 IOP Publishing Ltd
Название 10 Gbit s<sup>−1</sup> electroabsorption-modulated laser light-source module using selective area MOVPE
Тип paper
DOI 10.1088/0268-1242/20/9/005
Electronic ISSN 1361-6641
Print ISSN 0268-1242
Журнал Semiconductor Science and Technology
Том 20
Первая страница 917
Последняя страница 920
Аффилиация Li, Baoxia; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China
Аффилиация Zhu, Hongliang; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China
Аффилиация Zhang, Jing; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China
Аффилиация Zhao, Qian; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China
Аффилиация Pian, Jiaoqing; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China
Аффилиация Ding, Ying; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China
Аффилиация Wang, Baojun; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China
Аффилиация Bian, Jing; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China
Аффилиация Zhao, Lingjuan; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China
Аффилиация Wang, Wei; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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