Автор |
Li, Baoxia |
Автор |
Zhu, Hongliang |
Автор |
Zhang, Jing |
Автор |
Zhao, Qian |
Автор |
Pian, Jiaoqing |
Автор |
Ding, Ying |
Автор |
Wang, Baojun |
Автор |
Bian, Jing |
Автор |
Zhao, Lingjuan |
Автор |
Wang, Wei |
Дата выпуска |
2005-09-01 |
dc.description |
A distributed-feedback (DFB) laser and a high-speed electroabsorption (EA) modulator are integrated, on the basis of the selective area MOVPE growth (SAG) technique and the ridge waveguide structure, for a 10 Gbit s<sup>−1</sup> optical transmission system. The integrated DFB laser/EA modulator device is packaged in a compact module with a 20% optical coupling efficiency to the single-mode fibre. The typical threshold current is 15 mA, and the side-mode suppression ratio is over 40 dB with the single-mode operation at 1550 nm. The module exhibits 1.2 mW fibre output power at a laser gain current of 70 mA and a modulator bias voltage of 0 V. The 3 dB bandwidth is 12 GHz. A dynamic extinction ratio of over 10 dB has been successfully achieved under 10 Gbit s<sup>−1</sup> non-return to zero (NRZ) operation, and a clearly open eye diagram is obtained. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Копирайт |
2005 IOP Publishing Ltd |
Название |
10 Gbit s<sup>−1</sup> electroabsorption-modulated laser light-source module using selective area MOVPE |
Тип |
paper |
DOI |
10.1088/0268-1242/20/9/005 |
Electronic ISSN |
1361-6641 |
Print ISSN |
0268-1242 |
Журнал |
Semiconductor Science and Technology |
Том |
20 |
Первая страница |
917 |
Последняя страница |
920 |
Аффилиация |
Li, Baoxia; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China |
Аффилиация |
Zhu, Hongliang; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China |
Аффилиация |
Zhang, Jing; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China |
Аффилиация |
Zhao, Qian; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China |
Аффилиация |
Pian, Jiaoqing; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China |
Аффилиация |
Ding, Ying; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China |
Аффилиация |
Wang, Baojun; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China |
Аффилиация |
Bian, Jing; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China |
Аффилиация |
Zhao, Lingjuan; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China |
Аффилиация |
Wang, Wei; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China |
Выпуск |
9 |