We report the characteristics of stacked junctions fabricated by the focused ion beam etching method on a Bi-2212 whisker with low carrier concentration. In order to achieve low carrier concentration, the whisker edges were etched and the sample was annealed in 1 atm of flowing Ar at 200 °C for 1 h. A drop of critical current density (J_c) occurred when junction area (S) was decreased to the submicron range, and then the charging energy of the stack (E_c) was comparable to Josephson coupling energy (E_J). The E_c/E_J–J_c curves of the samples were similar to the theoretical curves which explains a fall of J_c due to Coulomb blockade for low T_C superconductor. Also, the annealed sample showed high junction resistance and low E_J, owing to a low carrier concentration by annealing.