| Автор | T Kawae |
| Автор | K Inomata |
| Автор | S-J Kim |
| Автор | Y I Latyshev |
| Автор | K Nakajima |
| Автор | T Yamashita |
| Автор | S Kishida |
| Автор | T Hatano |
| Дата выпуска | 2001-12-01 |
| dc.description | We report the characteristics of stacked junctions fabricated by the focused ion beam etching method on a Bi-2212 whisker with low carrier concentration. In order to achieve low carrier concentration, the whisker edges were etched and the sample was annealed in 1 atm of flowing Ar at 200 °C for 1 h. A drop of critical current density (J<sub>c</sub>) occurred when junction area (S) was decreased to the submicron range, and then the charging energy of the stack (E<sub>c</sub>) was comparable to Josephson coupling energy (E<sub>J</sub>). The E<sub>c</sub>/E<sub>J</sub>–J<sub>c</sub> curves of the samples were similar to the theoretical curves which explains a fall of J<sub>c</sub> due to Coulomb blockade for low T<sub>C</sub> superconductor. Also, the annealed sample showed high junction resistance and low E<sub>J</sub>, owing to a low carrier concentration by annealing. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Junction area dependence of critical current density in Bi-2212 stacked junction |
| Тип | paper |
| DOI | 10.1088/0953-2048/14/12/325 |
| Electronic ISSN | 1361-6668 |
| Print ISSN | 0953-2048 |
| Журнал | Superconductor Science and Technology |
| Том | 14 |
| Первая страница | 1102 |
| Последняя страница | 1105 |
| Выпуск | 12 |
