Improved flux pinning behaviour in bulk MgB<sub>2</sub> achieved by nano-SiO<sub>2</sub> addition
X F Rui; Y Zhao; Y Y Xu; L Zhang; X F Sun; Y Z Wang; H Zhang
Журнал:
Superconductor Science and Technology
Дата:
2004-04-01
Аннотация:
Bulk MgB<sub>2</sub> with SiO<sub>2</sub> nanoparticles added has been synthesized using a simple solid-state reaction route. The lattice constant in the c direction increases with additive content due to a small amount of Si being doped into the lattice of the MgB<sub>2</sub>; however, T<sub>c</sub> is almost fixed at 37.2 K. The addition of SiO<sub>2</sub> nanoparticles also improves the J<sub>c</sub>–H and H<sub>irr</sub>–T characteristics of MgB<sub>2</sub> when the additive content is lower than 7%. At 20 K and 1 T, J<sub>c</sub> for the sample with 7% additive content reaches 2.5 × 10<sup>5</sup> A cm<sup>−2</sup>. Microstructural analysis reveals that a high density of MgSi<sub>2</sub> nanoparticles (10–50 nm) exists inside the MgB<sub>2</sub> grains, leading to the formation of a nanocomposite superconductor.
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