| Автор | X F Rui |
| Автор | Y Zhao |
| Автор | Y Y Xu |
| Автор | L Zhang |
| Автор | X F Sun |
| Автор | Y Z Wang |
| Автор | H Zhang |
| Дата выпуска | 2004-04-01 |
| dc.description | Bulk MgB<sub>2</sub> with SiO<sub>2</sub> nanoparticles added has been synthesized using a simple solid-state reaction route. The lattice constant in the c direction increases with additive content due to a small amount of Si being doped into the lattice of the MgB<sub>2</sub>; however, T<sub>c</sub> is almost fixed at 37.2 K. The addition of SiO<sub>2</sub> nanoparticles also improves the J<sub>c</sub>–H and H<sub>irr</sub>–T characteristics of MgB<sub>2</sub> when the additive content is lower than 7%. At 20 K and 1 T, J<sub>c</sub> for the sample with 7% additive content reaches 2.5 × 10<sup>5</sup> A cm<sup>−2</sup>. Microstructural analysis reveals that a high density of MgSi<sub>2</sub> nanoparticles (10–50 nm) exists inside the MgB<sub>2</sub> grains, leading to the formation of a nanocomposite superconductor. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | IOP Publishing Ltd |
| Название | Improved flux pinning behaviour in bulk MgB<sub>2</sub> achieved by nano-SiO<sub>2</sub> addition |
| Тип | paper |
| DOI | 10.1088/0953-2048/17/4/022 |
| Electronic ISSN | 1361-6668 |
| Print ISSN | 0953-2048 |
| Журнал | Superconductor Science and Technology |
| Том | 17 |
| Первая страница | 689 |
| Последняя страница | 691 |
| Выпуск | 4 |
