Thermally stimulated luminescence in full-size 4H-SiC wafers
S Ostapenko; Yu M Suleimanov; I Tarasov; S Lulu; S E Saddow; S Ostapenko; University of South Florida, Center for Microelectronics Research, 4202 E Fowler Avenue, Tampa, FL 33620, USA; Yu M Suleimanov; University of South Florida, Center for Microelectronics Research, 4202 E Fowler Avenue, Tampa, FL 33620, USA; I Tarasov; University of South Florida, Center for Microelectronics Research, 4202 E Fowler Avenue, Tampa, FL 33620, USA; S Lulu; University of South Florida, Center for Microelectronics Research, 4202 E Fowler Avenue, Tampa, FL 33620, USA; S E Saddow; University of South Florida, Center for Microelectronics Research, 4202 E Fowler Avenue, Tampa, FL 33620, USA
Журнал:
Journal of Physics: Condensed Matter
Дата:
2002-12-09
Аннотация:
We performed non-contact and non-destructive spatially resolved characterization of traps and recombination centres in two-inch-diameter p-type 4H-SiC wafers using thermally stimulated luminescence (TSL) and scanning room temperature photoluminescence (PL). The TSL glow-curve maximum is located at about 190 K for the Al-doped wafers and the TSL spectrum has a maximum at 1.8 eV, which coincides with the spectrum of the red PL band in the same crystal. The TSL intensity exhibits a noticeable inhomogeneity across the wafers. The spatial distribution shows a negative contrast compared to PL maps, indicating a variation of concentration of the TSL centres across the wafer. The origin of the centres is discussed.
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