| Автор | S Ostapenko |
| Автор | Yu M Suleimanov |
| Автор | I Tarasov |
| Автор | S Lulu |
| Автор | S E Saddow |
| Дата выпуска | 2002-12-09 |
| dc.description | We performed non-contact and non-destructive spatially resolved characterization of traps and recombination centres in two-inch-diameter p-type 4H-SiC wafers using thermally stimulated luminescence (TSL) and scanning room temperature photoluminescence (PL). The TSL glow-curve maximum is located at about 190 K for the Al-doped wafers and the TSL spectrum has a maximum at 1.8 eV, which coincides with the spectrum of the red PL band in the same crystal. The TSL intensity exhibits a noticeable inhomogeneity across the wafers. The spatial distribution shows a negative contrast compared to PL maps, indicating a variation of concentration of the TSL centres across the wafer. The origin of the centres is discussed. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Thermally stimulated luminescence in full-size 4H-SiC wafers |
| Тип | paper |
| DOI | 10.1088/0953-8984/14/48/392 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 14 |
| Первая страница | 13381 |
| Последняя страница | 13386 |
| Аффилиация | S Ostapenko; University of South Florida, Center for Microelectronics Research, 4202 E Fowler Avenue, Tampa, FL 33620, USA |
| Аффилиация | Yu M Suleimanov; University of South Florida, Center for Microelectronics Research, 4202 E Fowler Avenue, Tampa, FL 33620, USA |
| Аффилиация | I Tarasov; University of South Florida, Center for Microelectronics Research, 4202 E Fowler Avenue, Tampa, FL 33620, USA |
| Аффилиация | S Lulu; University of South Florida, Center for Microelectronics Research, 4202 E Fowler Avenue, Tampa, FL 33620, USA |
| Аффилиация | S E Saddow; University of South Florida, Center for Microelectronics Research, 4202 E Fowler Avenue, Tampa, FL 33620, USA |
| Выпуск | 48 |
