Pattern transfer fidelity of nanoimprint lithography on six-inch wafers
Li, Mingtao; Chen, Lei; Zhang, Wei; Chou, Stephen Y; Li, Mingtao; NanoStructure Laboratory, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA; Chen, Lei; NanoOpto Corporation, 1600 Cottontail Lane, Somerset, NJ 08873, USA; Zhang, Wei; NanoOpto Corporation, 1600 Cottontail Lane, Somerset, NJ 08873, USA; Chou, Stephen Y; NanoStructure Laboratory, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
Журнал:
Nanotechnology
Дата:
2003-01-01
Аннотация:
We studied the pattern transfer fidelity of nanoimprint lithography (NIL) by patterning sub-micron MESFET gates on six-inch wafers. The critical dimensions (CD) of the gate patterns on the mould, imprinted in resist, as well as after oxygen reactive ion etching (RIE) and metal lift-off were measured, separately, using an ultrahigh-resolution scanning electron microscope. Comparison of the measurements reveals that the as-imprinted gates in resist are 5.2 (or 37 nm) on average larger than those on the mould with a standard deviation of 1.2 (or 8 nm), and the gates after oxygen RIE and metal lift-off are 42 (or 296 nm) on average larger than those on the mould with a standard deviation of 8 (or 30 nm). Compared with photolithography, NIL has better pattern transfer fidelity with CD controls about four times smaller.
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