| Автор | Li, Mingtao |
| Автор | Chen, Lei |
| Автор | Zhang, Wei |
| Автор | Chou, Stephen Y |
| Дата выпуска | 2003-01-01 |
| dc.description | We studied the pattern transfer fidelity of nanoimprint lithography (NIL) by patterning sub-micron MESFET gates on six-inch wafers. The critical dimensions (CD) of the gate patterns on the mould, imprinted in resist, as well as after oxygen reactive ion etching (RIE) and metal lift-off were measured, separately, using an ultrahigh-resolution scanning electron microscope. Comparison of the measurements reveals that the as-imprinted gates in resist are 5.2 (or 37 nm) on average larger than those on the mould with a standard deviation of 1.2 (or 8 nm), and the gates after oxygen RIE and metal lift-off are 42 (or 296 nm) on average larger than those on the mould with a standard deviation of 8 (or 30 nm). Compared with photolithography, NIL has better pattern transfer fidelity with CD controls about four times smaller. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Pattern transfer fidelity of nanoimprint lithography on six-inch wafers |
| Тип | paper |
| DOI | 10.1088/0957-4484/14/1/308 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 14 |
| Первая страница | 33 |
| Последняя страница | 36 |
| Аффилиация | Li, Mingtao; NanoStructure Laboratory, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA |
| Аффилиация | Chen, Lei; NanoOpto Corporation, 1600 Cottontail Lane, Somerset, NJ 08873, USA |
| Аффилиация | Zhang, Wei; NanoOpto Corporation, 1600 Cottontail Lane, Somerset, NJ 08873, USA |
| Аффилиация | Chou, Stephen Y; NanoStructure Laboratory, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA |
| Выпуск | 1 |
