| Автор | Austin, Michael D |
| Автор | Zhang, Wei |
| Автор | Ge, Haixiong |
| Автор | Wasserman, D |
| Автор | Lyon, S A |
| Автор | Chou, Stephen Y |
| Дата выпуска | 2005-08-01 |
| dc.description | A key issue in nanoimprint lithography (NIL) is determining the ultimate pitch resolution achievable for various pattern shapes and their critical dimensional control. To this end, we demonstrated the fabrication of 6 nm half-pitch gratings and 0.04 µm<sup>2</sup> cell area SRAM metal interconnects with 20 nm line half-pitch in resist by NIL. The mould for the 6 nm half-pitch grating was fabricated by cleaving a GaAs /Al<sub>0.7</sub>Ga<sub>0.3</sub>As superlattice grown on GaAs with molecular beam epitaxy, and selectively etching away the Al<sub>0.7</sub>Ga<sub>0.3</sub>As layers in dilute hydrofluoric acid. The mould for the 0.04 µm<sup>2</sup> SRAM metal interconnects was fabricated in silicon dioxide using 35 kV electron beam lithography with polystyrene as a negative resist and a reactive ion etch with the resist as mask. Imprints from both moulds showed excellent fidelity and critical dimension control. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | IOP Publishing Ltd |
| Название | 6 nm half-pitch lines and 0.04 µm<sup>2</sup> static random access memory patterns by nanoimprint lithography |
| Тип | paper |
| DOI | 10.1088/0957-4484/16/8/010 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 16 |
| Первая страница | 1058 |
| Последняя страница | 1061 |
| Аффилиация | Austin, Michael D; Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA |
| Аффилиация | Zhang, Wei; Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA |
| Аффилиация | Ge, Haixiong; Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA |
| Аффилиация | Wasserman, D; Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA |
| Аффилиация | Lyon, S A; Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA |
| Аффилиация | Chou, Stephen Y; Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA |
| Выпуск | 8 |
