Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs
Jiao, Y H; Wu, J; Xu, B; Jin, P; Hu, L J; Liang, L Y; Ren, Y Y; Wang, Z G; Jiao, Y H; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China; Wu, J; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China; Xu, B; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China; Jin, P; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China; Hu, L J; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China; Liang, L Y; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China; Ren, Y Y; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China; Wang, Z G; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China
Журнал:
Nanotechnology
Дата:
2006-12-14
Аннотация:
Periodical alignment of the InAs dots along the and directions was observed on an elastically relaxed InGaAs buffer layer grown at 500 and 450 °C, respectively, on the vicinal GaAs(001) substrate. Due to alignment along these directions, the InAs dots were arranged into a quasi-two-dimensional hexagonal lattice. Such a periodical arrangement of InAs dots may be explained in terms of modulation in strain as well as composition along [110] as observed by using cross-sectional transmission electron microscopy.
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