| Автор | Jiao, Y H |
| Автор | Wu, J |
| Автор | Xu, B |
| Автор | Jin, P |
| Автор | Hu, L J |
| Автор | Liang, L Y |
| Автор | Ren, Y Y |
| Автор | Wang, Z G |
| Дата выпуска | 2006-12-14 |
| dc.description | Periodical alignment of the InAs dots along the and directions was observed on an elastically relaxed InGaAs buffer layer grown at 500 and 450 °C, respectively, on the vicinal GaAs(001) substrate. Due to alignment along these directions, the InAs dots were arranged into a quasi-two-dimensional hexagonal lattice. Such a periodical arrangement of InAs dots may be explained in terms of modulation in strain as well as composition along [110] as observed by using cross-sectional transmission electron microscopy. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | IOP Publishing Ltd |
| Название | Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs |
| Тип | paper |
| DOI | 10.1088/0957-4484/17/23/022 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 17 |
| Первая страница | 5846 |
| Последняя страница | 5850 |
| Последняя страница | 5850 |
| Аффилиация | Jiao, Y H; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Аффилиация | Wu, J; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Аффилиация | Xu, B; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Аффилиация | Jin, P; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Аффилиация | Hu, L J; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Аффилиация | Liang, L Y; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Аффилиация | Ren, Y Y; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Аффилиация | Wang, Z G; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China |
| Выпуск | 23 |
