Formation and evolution of erbium silicide nanowires on vicinal and flat Si(001)
Zhou, Wei; Zhu, Yan; Ji, Ting; Hou, Xiaoyuan; Cai, Qun; Cai, Qun;; Zhou, Wei; Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, People’s Republic of China; Zhu, Yan; Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, People’s Republic of China; Ji, Ting; Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, People’s Republic of China; Hou, Xiaoyuan; Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, People’s Republic of China
Журнал:
Nanotechnology
Дата:
2006-02-14
Аннотация:
Erbium deposited on vicinal Si(001) at room temperature and postannealed at 630 °C is observed to form self-assembled erbium silicide nanowires with a single orientation. In the same growth conditions, the nanowires formed on the flat Si(001) surface possess two orthogonal orientations. The growths and evolutions of nanowires on vicinal and flat Si(001) are studied by scanning tunnelling microscopy and compared with each other. The nanowires on both vicinal and flat surfaces undergo a ripening process at the late growth stage, which is considered to be affected by coalescence and strain.
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