| Автор | Zhou, Wei |
| Автор | Zhu, Yan |
| Автор | Ji, Ting |
| Автор | Hou, Xiaoyuan |
| Автор | Cai, Qun |
| Дата выпуска | 2006-02-14 |
| dc.description | Erbium deposited on vicinal Si(001) at room temperature and postannealed at 630 °C is observed to form self-assembled erbium silicide nanowires with a single orientation. In the same growth conditions, the nanowires formed on the flat Si(001) surface possess two orthogonal orientations. The growths and evolutions of nanowires on vicinal and flat Si(001) are studied by scanning tunnelling microscopy and compared with each other. The nanowires on both vicinal and flat surfaces undergo a ripening process at the late growth stage, which is considered to be affected by coalescence and strain. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | IOP Publishing Ltd |
| Название | Formation and evolution of erbium silicide nanowires on vicinal and flat Si(001) |
| Тип | paper |
| DOI | 10.1088/0957-4484/17/3/040 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 17 |
| Первая страница | 852 |
| Последняя страница | 858 |
| Аффилиация | Cai, Qun; |
| Аффилиация | Zhou, Wei; Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, People’s Republic of China |
| Аффилиация | Zhu, Yan; Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, People’s Republic of China |
| Аффилиация | Ji, Ting; Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, People’s Republic of China |
| Аффилиация | Hou, Xiaoyuan; Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, People’s Republic of China |
| Выпуск | 3 |
