Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure
Wong, P S; Liang, B L; Dorogan, V G; Albrecht, A R; Tatebayashi, J; He, X; Nuntawong, N; Mazur, Yu I; Salamo, G J; Brueck, S R J; Huffaker, D L; Wong, P S; Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095, USA; Liang, B L; Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095, USA; Dorogan, V G; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA; Albrecht, A R; Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106, USA; Tatebayashi, J; Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095, USA; He, X; Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106, USA; Nuntawong, N; Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106, USA; Mazur, Yu I; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA; Salamo, G J; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA; Brueck, S R J; Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106, USA; Huffaker, D L; Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095, USA
Журнал:
Nanotechnology
Дата:
2008-10-22
Аннотация:
InAs quantum dots embedded in InGaAs quantum well (DWELL: dots-in-the-well) structures grown on nanopatterned GaAs pyramids and planar GaAs(001) surface are comparatively investigated. Photoluminescence (PL) measurements demonstrate that the DWELL structure grown on the GaAs pyramids exhibits a broad quantum well PL band (full width at half-maximum ∼ 90 meV) and a higher quantum dot emission efficiency than the DWELL structure grown on the planar GaAs(001) substrate. These properties are attributed to the InGaAs quantum well with distributed thickness profile on the faceted GaAs pyramids, which introduces a tapered energy band structure and enhances carrier capture into the quantum dots.
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