| Автор | Wong, P S |
| Автор | Liang, B L |
| Автор | Dorogan, V G |
| Автор | Albrecht, A R |
| Автор | Tatebayashi, J |
| Автор | He, X |
| Автор | Nuntawong, N |
| Автор | Mazur, Yu I |
| Автор | Salamo, G J |
| Автор | Brueck, S R J |
| Автор | Huffaker, D L |
| Дата выпуска | 2008-10-22 |
| dc.description | InAs quantum dots embedded in InGaAs quantum well (DWELL: dots-in-the-well) structures grown on nanopatterned GaAs pyramids and planar GaAs(001) surface are comparatively investigated. Photoluminescence (PL) measurements demonstrate that the DWELL structure grown on the GaAs pyramids exhibits a broad quantum well PL band (full width at half-maximum ∼ 90 meV) and a higher quantum dot emission efficiency than the DWELL structure grown on the planar GaAs(001) substrate. These properties are attributed to the InGaAs quantum well with distributed thickness profile on the faceted GaAs pyramids, which introduces a tapered energy band structure and enhances carrier capture into the quantum dots. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | IOP Publishing Ltd |
| Название | Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure |
| Тип | paper |
| DOI | 10.1088/0957-4484/19/43/435710 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 19 |
| Первая страница | 435710 |
| Последняя страница | 435714 |
| Аффилиация | Wong, P S; Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095, USA |
| Аффилиация | Liang, B L; Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095, USA |
| Аффилиация | Dorogan, V G; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA |
| Аффилиация | Albrecht, A R; Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106, USA |
| Аффилиация | Tatebayashi, J; Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095, USA |
| Аффилиация | He, X; Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106, USA |
| Аффилиация | Nuntawong, N; Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106, USA |
| Аффилиация | Mazur, Yu I; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA |
| Аффилиация | Salamo, G J; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA |
| Аффилиация | Brueck, S R J; Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106, USA |
| Аффилиация | Huffaker, D L; Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095, USA |
| Выпуск | 43 |
