A Pt/TiO<sub>2</sub>/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays
Park, Woo Young; Kim, Gun Hwan; Seok, Jun Yeong; Kim, Kyung Min; Song, Seul Ji; Lee, Min Hwan; Hwang, Cheol Seong; Park, Woo Young; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea; Kim, Gun Hwan; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea; Seok, Jun Yeong; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea; Kim, Kyung Min; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea; Song, Seul Ji; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea; Lee, Min Hwan; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea; Hwang, Cheol Seong; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
Журнал:
Nanotechnology
Дата:
2010-05-14
Аннотация:
This study examined the properties of Schottky-type diodes composed of Pt/TiO<sub>2</sub>/Ti, where the Pt/TiO<sub>2</sub> and TiO<sub>2</sub>/Ti junctions correspond to the blocking and ohmic contacts, respectively, as the selection device for a resistive switching cross-bar array. An extremely high forward-to-reverse current ratio of ∼ 10<sup>9</sup> was achieved at 1 V when the TiO<sub>2</sub> film thickness was 19 nm. TiO<sub>2</sub> film was grown by atomic layer deposition at a substrate temperature of 250 °C. Conductive atomic force microscopy revealed that the forward current flew locally, which limits the maximum forward current density to < 10 A cm<sup> − 2</sup> for a large electrode (an area of ∼ 60 000 µm<sup>2</sup>). However, the local current measurement showed a local forward current density as high as ∼ 10<sup>5</sup> A cm<sup> − 2</sup>. Therefore, it is expected that this type of Schottky diode effectively suppresses the sneak current without adverse interference effects in a nano-scale resistive switching cross-bar array with high block density.
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