| Автор | Park, Woo Young |
| Автор | Kim, Gun Hwan |
| Автор | Seok, Jun Yeong |
| Автор | Kim, Kyung Min |
| Автор | Song, Seul Ji |
| Автор | Lee, Min Hwan |
| Автор | Hwang, Cheol Seong |
| Дата выпуска | 2010-05-14 |
| dc.description | This study examined the properties of Schottky-type diodes composed of Pt/TiO<sub>2</sub>/Ti, where the Pt/TiO<sub>2</sub> and TiO<sub>2</sub>/Ti junctions correspond to the blocking and ohmic contacts, respectively, as the selection device for a resistive switching cross-bar array. An extremely high forward-to-reverse current ratio of ∼ 10<sup>9</sup> was achieved at 1 V when the TiO<sub>2</sub> film thickness was 19 nm. TiO<sub>2</sub> film was grown by atomic layer deposition at a substrate temperature of 250 °C. Conductive atomic force microscopy revealed that the forward current flew locally, which limits the maximum forward current density to < 10 A cm<sup> − 2</sup> for a large electrode (an area of ∼ 60 000 µm<sup>2</sup>). However, the local current measurement showed a local forward current density as high as ∼ 10<sup>5</sup> A cm<sup> − 2</sup>. Therefore, it is expected that this type of Schottky diode effectively suppresses the sneak current without adverse interference effects in a nano-scale resistive switching cross-bar array with high block density. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | IOP Publishing Ltd |
| Название | A Pt/TiO<sub>2</sub>/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays |
| Тип | paper |
| DOI | 10.1088/0957-4484/21/19/195201 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 21 |
| Первая страница | 195201 |
| Последняя страница | 195204 |
| Аффилиация | Park, Woo Young; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea |
| Аффилиация | Kim, Gun Hwan; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea |
| Аффилиация | Seok, Jun Yeong; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea |
| Аффилиация | Kim, Kyung Min; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea |
| Аффилиация | Song, Seul Ji; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea |
| Аффилиация | Lee, Min Hwan; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea |
| Аффилиация | Hwang, Cheol Seong; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea |
| Выпуск | 19 |
