Gallium arsenide (GaAs) island growth under SiO<sub>2</sub> nanodisks patterned on GaAs substrates
Tjahjana, Liliana; Wang, Benzhong; Tanoto, Hendrix; Chua, Soo-Jin; Yoon, Soon Fatt; Tjahjana, Liliana; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore ; Institute of Materials Research and Engineering, 3 Research Link, 117602, Singapore; Wang, Benzhong; Institute of Materials Research and Engineering, 3 Research Link, 117602, Singapore; Tanoto, Hendrix; Institute of Materials Research and Engineering, 3 Research Link, 117602, Singapore; Chua, Soo-Jin; Institute of Materials Research and Engineering, 3 Research Link, 117602, Singapore; Yoon, Soon Fatt; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore
Журнал:
Nanotechnology
Дата:
2010-05-14
Аннотация:
We report a growth phenomenon where uniform gallium arsenide (GaAs) islands were found to grow underneath an ordered array of SiO<sub>2</sub> nanodisks on a GaAs(100) substrate. Each island eventually grows into a pyramidal shape resulting in the toppling of the supported SiO<sub>2</sub> nanodisk. This phenomenon occurred consistently for each nanodisk across a large patterned area of ∼ 50 × 50 µm<sup>2</sup> (with nanodisks of 210 nm diameter and 280 nm spacing). The growth mechanism is attributed to a combination of ‘catalytic’ growth and facet formation.
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