| Автор | Tjahjana, Liliana |
| Автор | Wang, Benzhong |
| Автор | Tanoto, Hendrix |
| Автор | Chua, Soo-Jin |
| Автор | Yoon, Soon Fatt |
| Дата выпуска | 2010-05-14 |
| dc.description | We report a growth phenomenon where uniform gallium arsenide (GaAs) islands were found to grow underneath an ordered array of SiO<sub>2</sub> nanodisks on a GaAs(100) substrate. Each island eventually grows into a pyramidal shape resulting in the toppling of the supported SiO<sub>2</sub> nanodisk. This phenomenon occurred consistently for each nanodisk across a large patterned area of ∼ 50 × 50 µm<sup>2</sup> (with nanodisks of 210 nm diameter and 280 nm spacing). The growth mechanism is attributed to a combination of ‘catalytic’ growth and facet formation. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | IOP Publishing Ltd |
| Название | Gallium arsenide (GaAs) island growth under SiO<sub>2</sub> nanodisks patterned on GaAs substrates |
| Тип | paper |
| DOI | 10.1088/0957-4484/21/19/195305 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 21 |
| Первая страница | 195305 |
| Последняя страница | 195310 |
| Аффилиация | Tjahjana, Liliana; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore ; Institute of Materials Research and Engineering, 3 Research Link, 117602, Singapore |
| Аффилиация | Wang, Benzhong; Institute of Materials Research and Engineering, 3 Research Link, 117602, Singapore |
| Аффилиация | Tanoto, Hendrix; Institute of Materials Research and Engineering, 3 Research Link, 117602, Singapore |
| Аффилиация | Chua, Soo-Jin; Institute of Materials Research and Engineering, 3 Research Link, 117602, Singapore |
| Аффилиация | Yoon, Soon Fatt; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore |
| Выпуск | 19 |
