352 nm ultraviolet emission from high-quality crystalline AlN whiskers
Liu, Baodan; Bando, Yoshio; Wu, Aimin; Jiang, Xin; Dierre, Benjamin; Sekiguchi, Takashi; Tang, Chengchun; Mitome, Masanori; Golberg, Dmitri; Liu, Baodan; WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan ; School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, People’s Republic of China ; Key Laboratory of Materials Modification by Laser, Ion and Electron Beam, Ministry of Education, Dalian 116024, People’s Republic of China ;; Bando, Yoshio; WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan; Wu, Aimin; School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, People’s Republic of China ; Key Laboratory of Materials Modification by Laser, Ion and Electron Beam, Ministry of Education, Dalian 116024, People’s Republic of China; Jiang, Xin; School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, People’s Republic of China ; Key Laboratory of Materials Modification by Laser, Ion and Electron Beam, Ministry of Education, Dalian 116024, People’s Republic of China; Dierre, Benjamin; Advanced Electronic Materials Center, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan; Sekiguchi, Takashi; Advanced Electronic Materials Center, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan; Tang, Chengchun; WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan; Mitome, Masanori; WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan; Golberg, Dmitri; WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
Журнал:
Nanotechnology
Дата:
2010-02-19
Аннотация:
High-quality, crystalline AlN whiskers with large yield have been synthesized through the direct nitridation of Al vapor at high temperature. The AlN whiskers exhibited a strong and uniform ultraviolet emission at ∼352 nm, which is notably shorter compared with the wavelength of previously reported one-dimensional AlN nanostructures. Energy filtered transmission electron microscope (TEM) analyses indicated that nitrogen deficiency and rather lower oxygen content in the AlN lattice might be responsible for the strong 352 nm ultraviolet emission.
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