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Автор Liu, Baodan
Автор Bando, Yoshio
Автор Wu, Aimin
Автор Jiang, Xin
Автор Dierre, Benjamin
Автор Sekiguchi, Takashi
Автор Tang, Chengchun
Автор Mitome, Masanori
Автор Golberg, Dmitri
Дата выпуска 2010-02-19
dc.description High-quality, crystalline AlN whiskers with large yield have been synthesized through the direct nitridation of Al vapor at high temperature. The AlN whiskers exhibited a strong and uniform ultraviolet emission at ∼352 nm, which is notably shorter compared with the wavelength of previously reported one-dimensional AlN nanostructures. Energy filtered transmission electron microscope (TEM) analyses indicated that nitrogen deficiency and rather lower oxygen content in the AlN lattice might be responsible for the strong 352 nm ultraviolet emission.
Формат application.pdf
Издатель Institute of Physics Publishing
Копирайт IOP Publishing Ltd
Название 352 nm ultraviolet emission from high-quality crystalline AlN whiskers
Тип paper
DOI 10.1088/0957-4484/21/7/075708
Electronic ISSN 1361-6528
Print ISSN 0957-4484
Журнал Nanotechnology
Том 21
Первая страница 75708
Последняя страница 75714
Аффилиация Liu, Baodan; WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan ; School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, People’s Republic of China ; Key Laboratory of Materials Modification by Laser, Ion and Electron Beam, Ministry of Education, Dalian 116024, People’s Republic of China ;
Аффилиация Bando, Yoshio; WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
Аффилиация Wu, Aimin; School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, People’s Republic of China ; Key Laboratory of Materials Modification by Laser, Ion and Electron Beam, Ministry of Education, Dalian 116024, People’s Republic of China
Аффилиация Jiang, Xin; School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, People’s Republic of China ; Key Laboratory of Materials Modification by Laser, Ion and Electron Beam, Ministry of Education, Dalian 116024, People’s Republic of China
Аффилиация Dierre, Benjamin; Advanced Electronic Materials Center, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
Аффилиация Sekiguchi, Takashi; Advanced Electronic Materials Center, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
Аффилиация Tang, Chengchun; WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
Аффилиация Mitome, Masanori; WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
Аффилиация Golberg, Dmitri; WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
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