Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure
Mazur, Yu I; Dorogan, V G; Schmidbauer, M; Tarasov, G G; Johnson, S R; Lu, X; Yu, S-Q; Wang, Zh M; Tiedje, T; Salamo, G J; Mazur, Yu I; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA; Dorogan, V G; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA; Schmidbauer, M; Leibniz Institute for Crystal Growth, Max-Born-Strasse 2, D-12489 Berlin, Germany; Tarasov, G G; Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 45, Kiev 03028, Ukraine; Johnson, S R; Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287, USA; Lu, X; Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287, USA; Yu, S-Q; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA; Wang, Zh M; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA; Tiedje, T; Department of Electrical and Computer Engineering, University of Victoria, Victoria, British Columbia, BC V8W 3P6, Canada; Salamo, G J; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA
Журнал:
Nanotechnology
Дата:
2011-09-16
Аннотация:
A Ga(AsBi) quantum well (QW) with Bi content reaching 6% and well width of 11 nm embedded in GaAs is grown by molecular beam epitaxy at low temperature and studied by means of high-resolution x-ray diffraction, photoluminescence (PL), and time-resolved PL. It is shown that for this growth regime, the QW is coherently strained to the substrate with a low dislocation density. The low temperature PL demonstrates a comparatively narrow excitonic linewidth of ∼ 40 meV. For high excitation density distinct QW excited states evolve in the emission spectra. The origins of peculiar PL dependences on temperature and excitation density are interpreted in terms of intra-well optical transitions.
491.8Кб