| Автор | Mazur, Yu I |
| Автор | Dorogan, V G |
| Автор | Schmidbauer, M |
| Автор | Tarasov, G G |
| Автор | Johnson, S R |
| Автор | Lu, X |
| Автор | Yu, S-Q |
| Автор | Wang, Zh M |
| Автор | Tiedje, T |
| Автор | Salamo, G J |
| Дата выпуска | 2011-09-16 |
| dc.description | A Ga(AsBi) quantum well (QW) with Bi content reaching 6% and well width of 11 nm embedded in GaAs is grown by molecular beam epitaxy at low temperature and studied by means of high-resolution x-ray diffraction, photoluminescence (PL), and time-resolved PL. It is shown that for this growth regime, the QW is coherently strained to the substrate with a low dislocation density. The low temperature PL demonstrates a comparatively narrow excitonic linewidth of ∼ 40 meV. For high excitation density distinct QW excited states evolve in the emission spectra. The origins of peculiar PL dependences on temperature and excitation density are interpreted in terms of intra-well optical transitions. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | IOP Publishing Ltd |
| Название | Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure |
| Тип | paper |
| DOI | 10.1088/0957-4484/22/37/375703 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 22 |
| Первая страница | 375703 |
| Последняя страница | 375708 |
| Аффилиация | Mazur, Yu I; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA |
| Аффилиация | Dorogan, V G; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA |
| Аффилиация | Schmidbauer, M; Leibniz Institute for Crystal Growth, Max-Born-Strasse 2, D-12489 Berlin, Germany |
| Аффилиация | Tarasov, G G; Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 45, Kiev 03028, Ukraine |
| Аффилиация | Johnson, S R; Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287, USA |
| Аффилиация | Lu, X; Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287, USA |
| Аффилиация | Yu, S-Q; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA |
| Аффилиация | Wang, Zh M; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA |
| Аффилиация | Tiedje, T; Department of Electrical and Computer Engineering, University of Victoria, Victoria, British Columbia, BC V8W 3P6, Canada |
| Аффилиация | Salamo, G J; Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA |
| Выпуск | 37 |
