A new fabrication process for mold-type SiC sharp tips for field-emission arrays has been presented. Gated emitters have been fabricated in a multi-step process using the transfer-mold technique. Gates were made of heavily boron-doped silicon, and a boron etch-stop technique for the KOH anisotropic etching was applied. The critical points of the fabrication process: anodic bonding of the silicon covered with a thin-film multi-layer of silicon oxide and boron-doped silicon carbide have been discussed in detail. The new method can be applied in the fabrication of double-gate mold-type emitters able to emit convergent electron beams.