| Автор | Anna Górecka-Drzazga |
| Автор | Jan Dziuban |
| Автор | Włodzimierz Drzazga |
| Дата выпуска | 2004-07-01 |
| dc.description | A new fabrication process for mold-type SiC sharp tips for field-emission arrays has been presented. Gated emitters have been fabricated in a multi-step process using the transfer-mold technique. Gates were made of heavily boron-doped silicon, and a boron etch-stop technique for the KOH anisotropic etching was applied. The critical points of the fabrication process: anodic bonding of the silicon covered with a thin-film multi-layer of silicon oxide and boron-doped silicon carbide have been discussed in detail. The new method can be applied in the fabrication of double-gate mold-type emitters able to emit convergent electron beams. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2004 IOP Publishing Ltd |
| Название | Mold-type SiC field emitters with heavily boron-doped gates |
| Тип | paper |
| DOI | 10.1088/0960-1317/14/7/010 |
| Electronic ISSN | 1361-6439 |
| Print ISSN | 0960-1317 |
| Журнал | Journal of Micromechanics and Microengineering |
| Том | 14 |
| Первая страница | 907 |
| Последняя страница | 913 |
| Аффилиация | Anna Górecka-Drzazga; Faculty of Microsystem Electronic and Photonics, Wrocław University of Technology, Janiszewskiego 11/17 Str, 50-372 Wrocław, Poland |
| Аффилиация | Jan Dziuban; Faculty of Microsystem Electronic and Photonics, Wrocław University of Technology, Janiszewskiego 11/17 Str, 50-372 Wrocław, Poland |
| Аффилиация | Włodzimierz Drzazga; Faculty of Microsystem Electronic and Photonics, Wrocław University of Technology, Janiszewskiego 11/17 Str, 50-372 Wrocław, Poland |
| Выпуск | 7 |
