C<sub>60</sub> thin-film transistors with high field-effect mobility, fabricated by molecular beam deposition
Kobayashi, S.; Takenobu, T.; Mori, S.; Fujiwara, A.; Iwasa, Y.; Kobayashi, S.; Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan; CREST, Japan Science and Technology Corporation, Kawaguchi 332-0012, Japan;; Takenobu, T.; Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan; CREST, Japan Science and Technology Corporation, Kawaguchi 332-0012, Japan; Mori, S.; Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan; CREST, Japan Science and Technology Corporation, Kawaguchi 332-0012, Japan; Fujiwara, A.; Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan; CREST, Japan Science and Technology Corporation, Kawaguchi 332-0012, Japan; Iwasa, Y.; Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan; CREST, Japan Science and Technology Corporation, Kawaguchi 332-0012, Japan
Журнал:
Science and Technology of Advanced Materials
Дата:
2003-07-01
Аннотация:
We report performance of C<sub>60</sub> thin-film field-effect transistors and characterizations of C<sub>60</sub> thin-films on SiO<sub>2</sub> substrates fabricated by molecular beam deposition. Devices, fabricated and characterized under high vacuum without exposing to air, routinely showed current on/off ratios >10<sup>8</sup> and field-effect mobility in the range of 0.5–0.3 cm<sup>2</sup>/V s. The obtained mobility is comparable to the highest value among n-type organic thin-film transistors and close to that derived from the photocurrent measurements on C<sub>60</sub> thin-films. The grain size of C<sub>60</sub> thin-film, condensed in an fcc solid, increases with the substrate temperature, while the mobility did not exhibit a clear relation with substrate temperature.
239.9Кб