| Автор | Kobayashi, S. |
| Автор | Takenobu, T. |
| Автор | Mori, S. |
| Автор | Fujiwara, A. |
| Автор | Iwasa, Y. |
| Дата выпуска | 2003-07-01 |
| dc.description | We report performance of C<sub>60</sub> thin-film field-effect transistors and characterizations of C<sub>60</sub> thin-films on SiO<sub>2</sub> substrates fabricated by molecular beam deposition. Devices, fabricated and characterized under high vacuum without exposing to air, routinely showed current on/off ratios >10<sup>8</sup> and field-effect mobility in the range of 0.5–0.3 cm<sup>2</sup>/V s. The obtained mobility is comparable to the highest value among n-type organic thin-film transistors and close to that derived from the photocurrent measurements on C<sub>60</sub> thin-films. The grain size of C<sub>60</sub> thin-film, condensed in an fcc solid, increases with the substrate temperature, while the mobility did not exhibit a clear relation with substrate temperature. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | © 2003 Elsevier Science Ltd |
| Название | C<sub>60</sub> thin-film transistors with high field-effect mobility, fabricated by molecular beam deposition |
| Тип | paper |
| DOI | 10.1016/S1468-6996(03)00064-0 |
| Electronic ISSN | 1878-5514 |
| Print ISSN | 1468-6996 |
| Журнал | Science and Technology of Advanced Materials |
| Том | 4 |
| Первая страница | 371 |
| Последняя страница | 375 |
| Аффилиация | Kobayashi, S.; Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan; CREST, Japan Science and Technology Corporation, Kawaguchi 332-0012, Japan; |
| Аффилиация | Takenobu, T.; Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan; CREST, Japan Science and Technology Corporation, Kawaguchi 332-0012, Japan |
| Аффилиация | Mori, S.; Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan; CREST, Japan Science and Technology Corporation, Kawaguchi 332-0012, Japan |
| Аффилиация | Fujiwara, A.; Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan; CREST, Japan Science and Technology Corporation, Kawaguchi 332-0012, Japan |
| Аффилиация | Iwasa, Y.; Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan; CREST, Japan Science and Technology Corporation, Kawaguchi 332-0012, Japan |
| Выпуск | 4 |
